Germanium Based Field-Effect Transistors: Challenges and Opportunities
نویسندگان
چکیده
منابع مشابه
Germanium Based Field-Effect Transistors: Challenges and Opportunities
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This...
متن کاملGermanium channel MOSFETs: Opportunities and challenges
Introduction MOSFETs with a high-mobility channel are attractive candidates for advanced CMOS device structures, since it is becoming increasingly difficult to enhance Si CMOS performance through traditional device scaling. The lower effective mass and higher mobility of carriers in germanium (Ge) compared with silicon (Si) (2x higher mobility for electrons and 4x for holes) has prompted renewe...
متن کاملfabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions
a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...
Islam; Challenges and Opportunities
Undoubtedly Islamic Revolution of Iran has been the source of Islamic awakening in the middle-east. Therefore Islamic Republic of Iran plays the role of an example and a director of political developments in the region. Islamic awakening in Arab countries has been able to question the dominant discourse of dictators in the middle-east region and topple their regimes. These developments include ...
متن کاملCobalt phthalocyanine-based submicrometric field-effect transistors
We present performance characteristics of nanoscaled cobalt phthalocyanine-based organic field-effect transistors (OFETs) as a function of channel length. We found a channel length range which maximizes the field effect mobility in a trade-off between the decrease in the number of organic grain boundaries and the increase of the electrode-organic contact region. Further reduction of channel len...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Materials
سال: 2014
ISSN: 1996-1944
DOI: 10.3390/ma7032301